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absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 22* i d @ v gs = 12v, t c = 100c continuous drain current 16 i dm pulsed drain current 88 p d @ t c = 25c max. power dissipation 75 w linear derating factor 0.6 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 70 mj i ar avalanche current 22 a e ar repetitive avalanche energy 7.5 mj dv/dt peak d iode recovery dv/dt 1.4 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 1.0 (typical) g pre-irradiation international rectifier?s r5 tm technology provides high performance power mosfets for space applications.these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. c a radiation hardened jansr2n7481u3 power mosfet surface mount (smd-0.5) ref: mil-prf-19500/703 www.irf.com 1 100v, n-channel * current is limited by package technology features: single event effect (see) hardened ultra low r ds(on) low total gate charge simple drive requirements ease of paralleling hermetically sealed surface mount ceramic package light weight for footnotes refer to the last page smd-0.5 IRHNJ57130 product summary part number radiation level r ds(on) i d qpl part number IRHNJ57130 100k rads (si) 0.06 ? 22a* jansr2n7481u3 irhnj53130 300k rads (si) 0.06 ? 22a* jansf2n7481u3 irhnj54130 500k rads (si) 0.06 ? 22a* jansg2n7481u3 irhnj58130 1000k rads(si) 0.075 ? 22a* jansh2n7481u3 pd-93754g
IRHNJ57130, jansr2n7481u3 pre-irradiation 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 100 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.11 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.06 ? v gs = 12v, i d = 16a resistance v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 13 ? ? s v ds 15v, i ds = 16a i dss zero gate voltage drain current ? ? 10 v ds = 80v ,v gs = 0v ??25 v ds = 80v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 50 v gs =12v, i d = 22a q gs gate-to-source charge ? ? 7.4 nc v ds = 50v q gd gate-to-drain (?miller?) charge ? ? 20 t d (on) turn-on delay time ? ? 25 v dd = 50v, i d = 22a, t r rise time ? ? 100 v gs =12v, r g = ? t d (off) turn-off delay time ? ? 35 t f fall time ? ? 30 l s + l d total inductance ? 4.0 ? c iss input capacitance ? 1005 ? v gs = 0v, v ds = 25v c oss output capacitance ? 365 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 50 ? na nh ns a thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 1.67 r thj-pcb junction-to-pc board ? 6.9 ?

c/w measured from the center of drain pad to center of source pad note: corresponding spice and saber models are available on international rectifier web site. for footnotes refer to the last page current is limited by package source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? 22 i sm pulse source current (body diode) ?? 88 v sd diode forward voltage ? ? 1.2 v t j = 25c, i s = 22a, v gs = 0v t rr reverse recovery time ? ? 250 ns t j = 25c, i f = 22a, di/dt 100a/ s q rr reverse recovery charge ? ? 850 nc v dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a
www.irf.com 3 pre-irradiation IRHNJ57130, jansr2n7481u3 table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter up to 500k rads(si) 1 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 100 ? 100 ? v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.5 4.0 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward ? 100 ? 100 na v gs = 20v i gss gate-to-source leakage reverse ? -100 ? -100 v gs = -20 v i dss zero gate voltage drain current ? 10 ? 25 a v ds = 80v, v gs = 0v r ds(on) static drain-to-source ? 0.064 ? 0.08 ? v gs = 12v, i d =16a on-state resistance (to-3) r ds(on) static drain-to-source ? 0.06 ? 0.075 ? v gs = 12v, i d =16a on-state resistance (smd-.5) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part numbers IRHNJ57130 (jansr2n7481u3), irhnj53130 (jansf2n7481u3) and irhnj54130 (jansg2n7481u3) 2. part number irhnj58130 (jansh2n7481u3) fig a. typical single event effect, safe operating area v sd diode forward voltage ? 1.2 ? 1.2 v v gs = 0v, i s = 22a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page table 2. typical single event effect safe operating area let ener g y ran g evds (v) ( mev/ ( m g /cm 2 )) ( mev ) ( m ) @vgs = @vgs = @vgs = @vgs = @vgs = 0v -5v -10v -15v -20v 38 5% 300 7.5% 38 7.5% 100 100 100 100 100 61 5% 330 7.5% 31 10% 100 100 100 35 25 84 5% 350 10% 28 7.5% 100 100 80 25 - 0 20 40 60 80 100 120 -20 -15 -10 -5 0 bias vgs (v) bias vds (v) let=38 5% let=61 5% let=84 5%
IRHNJ57130, jansr2n7481u3 pre-irradiation 4 www.irf.com normalized on-resistance vs. temperature typical output characteristics typical output characteristics typical transfer characteristics 15 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 10 100 5.0 6.0 7.0 8.0 9.0 10.0 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 150 c j t = 25 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 22a
www.irf.com 5 pre-irradiation IRHNJ57130, jansr2n7481u3
maximum safe operating area typical gate charge vs. gate-to-source voltage typical capacitance vs. drain-to-source voltage typical source-drain diode forward voltage 1 10 100 0 400 800 1200 1600 2000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 10 20 30 40 50 0 5 10 15 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 22a v = 20v ds v = 50v ds v = 80v ds 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 1 00 s dc
IRHNJ57130, jansr2n7481u3 pre-irradiation 6 www.irf.com fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + - fig 11. maximum effective transient thermal impedance, junction-to-case maximum drain current vs. case temperature 25 50 75 100 125 150 0 5 10 15 20 25 30 t , case temperature ( c) i , d ra i n c urren t (a) c d limited by package 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
www.irf.com 7 pre-irradiation IRHNJ57130, jansr2n7481u3 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 30 60 90 120 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 9.8a 14a 22a
IRHNJ57130, jansr2n7481u3 pre-irradiation 8 www.irf.com pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 80 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 50v, starting t j = 25c, l= 0.3 mh peak i l = 22a, v gs = 12v i sd 22a, di/dt 155a/ s, v dd 100v, t j 150c footnotes: case outline and dimensions ? smd-0.5 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 10/2011

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